N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0024 0
|
|
|
Top Searches for this datasheet
Si7866ADP
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 0.0024 0.0030 (A)a (Typ)
FEATURES
TrenchFET® Power MOSFET rDS(on) (Qgd Optimized Tested RoHS Compliant
RoHS
COMPLIANT
PowerPAK SO-8
APPLICATIONS
5.15
6.15
Low-Side MOSFET Synchronous Buck DC/DC Converters Desktops Output Voltage Synchronous Rectifier
Bottom View Ordering Information: Si7866ADP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Symbol Tstg Limit 35b, 28b, 4.9b, 5.4b, 3.4b, Unit
Continuous Drain Current
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
Maximum Power Dissipation
Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)d,
THERMAL RESISTANCE RATINGS
Symbol Typical Maximum Unit RthJA Maximum Junction-to-Ambientb, °C/W RthJC Maximum Junction-to-Case (Drain) Steady State Notes: Based Surface Mounted board. sec. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. Maximum under Steady State conditions °C/W. Document Number: 73380 S-61086-Rev. 19-Jun-06 www.vishay.com Parameter
Si7866ADP
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic
Symbol VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) Ciss Coss Crss td(on) td(off) td(on) td(off)
Test Conditions VGS,
Unit
0.0019 0.0023 0.0024 0.0030
mV/°C
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
5415 VGEN 1285 12.5 10.3 VGEN
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time di/dt A/µs, 0.72
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
www.vishay.com
Document Number: 73380 S-61086-Rev. 19-Jun-06
Si7866ADP
TYPICAL CHARACTERISTICS unless noted
Drain Current
thru
Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.0030 7000 6000 0.0027 Capacitance (pF) 5000 4000 3000 2000 0.0018 1000 0.0015 Crss
Transfer Characteristics
Ciss
rDS(on) On-Resistance
0.0024
0.0021
Coss
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current Gate Voltage
rDS(on) On-Resistance (Normalized)
Capacitance
Gate-to-Source Voltage
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge Document Number: 73380 S-61086-Rev. 19-Jun-06
On-Resistance Junction Temperature www.vishay.com
Si7866ADP
TYPICAL CHARACTERISTICS unless noted
rDS(on) Drain-to-Source On-Resistance 0.010 Source Current
0.008
0.006
0.004
0.002
0.01 0.00 Source-to-Drain Voltage
0.000
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
VGS(th)
Power
0.001
0.01
Time (sec)
Temperature (°C)
Threshold Voltage
*Limited DS(on) Drain Current
Single Pulse Power, Junction-to-Ambient
Single Pulse 0.01 0.01
Drain-to-Source Voltage *VGS minimum which rDS(on) specified
Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 73380 S-61086-Rev. 19-Jun-06
Si7866ADP
TYPICAL CHARACTERISTICS unless noted
Drain Current
Package Limited
Case Temperature (°C)
Current Derating*
Power Power
Case Temperature (°C)
Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
*The power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Document Number: 73380 S-61086-Rev. 19-Jun-06
www.vishay.com
Si7866ADP
TYPICAL CHARACTERISTICS unless noted
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base thJA °C/W PDMZthJA(t)
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
www.vishay.com
Document Number: 73380 S-61086-Rev. 19-Jun-06
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
www.vishay.com
Other recent searches
SF1174D - SF1174D SF1174D Datasheet
SCHS307C - SCHS307C SCHS307C Datasheet
LXT318 - LXT318 LXT318 Datasheet
LXT304A - LXT304A LXT304A Datasheet
LXT316 - LXT316 LXT316 Datasheet
BVU-549QT8 - BVU-549QT8 BVU-549QT8 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
