N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY r

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY r

Datasheet Thumbnail

Top Searches for this datasheet

Si7840BDP
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
rDS(on) 0.0085 0.0105 16.5 (Typ)
FEATURES
TrenchFET® Power MOSFET Thermal Resistance PowerPAK® Package with 1.07-mm Profile Tested
RoHS
COMPLIANT
APPLICATIONS
PowerPAK SO-8
DC/DC Converters Optimized "High-Side" Synchronous Rectifier Operations
5.15
6.15
Bottom View Ordering Information: Si7840BDP-T1-E3 (Lead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C)a Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)c, Conduction)a 25°C 70°C 25°C 70°C Symbol Tstg secs 16.5 Steady State Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes Surface Mounted Board. sec. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components.
Document Number: 73218 S-51566-Rev. 07-Nov-05
www.vishay.com
Si7840BDP
MOSFET SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Reverse Recovery Charge td(on) td(off) di/dt A/µs VGEN 16.5 VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55°C 16.5 16.5 0.007 0.0084 0.75 0.0085 0.0105 ±100 Symbol Test Condition Unit
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless noted
thru Drain Current Drain Current
125°C 25°C 55°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
www.vishay.com
Document Number: 73218 S-51566-Rev. 07-Nov-05
Si7840BDP
TYPICAL CHARACTERISTICS
0.012 0.011 On-Resistance 2000 Capacitance (pF) 0.010 0.009 0.008 0.007 0.006 0.005 0.004 Crss
unless noted
2500 Ciss
1500
1000 Coss
DS(on)
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage 16.5 rDS(on) On-Resistance (Normalized) 16.5
Capacitance
Total Gate Charge (nC)
Junction Temperature
Gate Charge
0.05 0.04
On-Resistance Junction Temperature
Source Current
On-Resistance
150°C
16.5 0.03
0.02
25°C
DS(on)
0.01 0.00
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 73218 S-51566-Rev. 07-Nov-05
www.vishay.com
Si7840BDP
TYPICAL CHARACTERISTICS unless noted
GS(th) Variance
Power
0.001 0.01 Temperature Time (sec)
Threshold Voltage
Single Pulse Power
*Limited rDS(on) Drain Current 25°C Single Pulse
0.01
Drain-to-Source Voltage *VGS minimum which rDS(on) specified
Safe Operating Area, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base RthJA 58°C/W PDMZthJA(t) Surface Mounted
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
Document Number: 73218 S-51566-Rev. 07-Nov-05
Si7840BDP
TYPICAL CHARACTERISTICS unless noted
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 73218 S-51566-Rev. 07-Nov-05
www.vishay.com

N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY r

Top Searches for this datasheet

Other recent searches