N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.003 0.

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.003 0.

Datasheet Thumbnail

Top Searches for this datasheet

Si7864ADP
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 0.003 0.0042 (Typ)
FEATURES
TrenchFET® Power MOSFETS: Rated rDS(on) (Qgd Optimized Tested
RoHS
COMPLIANT
APPLICATIONS
PowerPAK® SO-8
Low-Side MOSFET Synchronous Buck DC/DC Converters Servers Routers
6.15
5.15
Bottom View Ordering Information: Si7864ADP-T1-E3 (Lead (Pb)-Free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c Symbol Tstg secs Steady State Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes: Surface Mounted Board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components.
Document Number: 73166 S-60782-Rev. 08-May-06
www.vishay.com
Si7864ADP
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time
Symbol VGS(th) IGSS IDSS ID(on) rDS(on) Ciss Coss Crss td(on) td(off)
Test Conditions VGS,
Unit
0.0023 0.0032 0.70 5330 0.003 0.0042
1240
VGEN di/dt A/µs
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless noted
thru
Drain Current
Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
www.vishay.com
Document Number: 73166 S-60782-Rev. 08-May-06
Si7864ADP
TYPICAL CHARACTERISTICS
0.005
unless noted
8500
DS(on) On-Resistance
0.004 0.003 0.002 Capacitance (pF)
6800 Ciss 5100
3400
0.001
1700 Crss
Coss
0.000
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage rDS(on) On-Resistance (Normalized)
Capacitance
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.010
On-Resistance Junction Temperature
DS(on) On-Resistance
0.008
Source Current
0.006 0.004
0.002
0.00 Source-to-Drain Voltage
0.000
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 73166 S-60782-Rev. 08-May-06
www.vishay.com
Si7864ADP
TYPICAL CHARACTERISTICS unless noted
GS(th) Variance Power
0.001
0.01
Time (sec)
Temperature (°C)
Threshold Voltage
Single Pulse Power
*Limited rDS(on) Drain Current
Single Pulse
0.01 0.01
Drain-to-Source Voltage *VGS minimum which rDS(on) specified
Safe Operating Area, Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base thJA °C/W
Single Pulse 0.01 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
Document Number: 73166 S-60782-Rev. 08-May-06
Si7864ADP
TYPICAL CHARACTERISTICS unless noted
Normalized Effective Transient Thermal Impedance Duty Cycle
Single Pulse 0.05 0.02
0.01 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 73166 S-60782-Rev. 08-May-06
www.vishay.com

N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.003 0.

Top Searches for this datasheet

Other recent searches