N-Channel 16-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.003 0.

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N-Channel 16-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.003 0.

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Si7862ADP
N-Channel 16-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 0.003 0.0055 (Typ)
FEATURES
TrenchFET® Power MOSFETS: 2.5-V Rated 3.3-m rDS(on) Gate Resistance Tested
RoHS
COMPLIANT
APPLICATIONS
PowerPAK® SO-8
Synchronous Rectification Output Voltage Synchronous Rectification
5.15
6.15
Bottom View Ordering Information: Si7862ADP-T1-E3 (Lead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c 25°C 70°C 25°C 70°C Symbol Tstg secs Steady State Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes Surface Mounted Board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components.
Document Number: 73165 S-51566-Rev. 07-Nov-05
www.vishay.com
Si7862ADP
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss td(on) td(off) di/dt A/µs VGEN 7340 2180 11.5 12.5 VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55°C 0.0024 0.0045 0.75 0.003 0.0055 ±100 Symbol Test Condition Unit
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless noted
thru
Drain Current
Drain Current
125° -55°
Drain-to-Source Voltage
Output Characteristics
Gate-to-Source Voltage
Transfer Characteristics
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Document Number: 73165 S-51566-Rev. 07-Nov-05
Si7862ADP
TYPICAL CHARACTERISTICS
0.010
unless noted
10000
DS(on) On-Resistance
0.008 Capacitance (pF)
8000
Ciss
0.006
6000
0.004 0.002
4000 Coss 2000 Crss
0.000
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage rDS(on) On-Resistance (Normalized)
Capacitance
Total Gate Charge (nC)
Junction Temperature
Gate Charge
0.015
On-Resistance Junction Temperature
150° Source Current
DS(on) On-Resistance
0.012
0.009
0.006 0.003
0.00 Source-to-Drain Voltage
0.000
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 73165 S-51566-Rev. 07-Nov-05
www.vishay.com
Si7862ADP
TYPICAL CHARACTERISTICS unless noted
GS(th) Variance -0.0 Power
-0.2
-0.4
-0.6
-0.8
0.001
0.01
Time (sec)
Temperature
Threshold Voltage
*Limited rDS(on) Drain Current
Single Pulse Power
Single Pulse
0.01 0.01
Drain-to-Source Voltage *VGS minimum which rDS(on) specified
Safe Operating Area Junction-to-Case
Duty Cycle
Normalized Effective Transient Thermal Impedance
Notes:
0.05
0.02
Duty Cycle,
Unit Base RthJA
Single Pulse 0.01 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73165 S-51566-Rev. 07-Nov-05
Si7862ADP
TYPICAL CHARACTERISTICS unless noted
Duty Cycle
Normalized Effective Transient Thermal Impedance
Single Pulse 0.05 0.02
0.01 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 73165 S-51566-Rev. 07-Nov-05
www.vishay.com

N-Channel 16-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.003 0.

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