N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0026 0

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0026 0

Datasheet Thumbnail

Top Searches for this datasheet

Si7858ADP
N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 0.0026 0.0037 (Typ)
FEATURES
TrenchFET® Power MOSFET Thermal Resistance PowerPAK® Package with 1.07 Profile Tested
RoHS
COMPLIANT
APPLICATIONS
PowerPAK SO-8
Output Voltage, High Current Synchronous Rectifiers
5.15
6.15
Bottom View Ordering Information: Si7858ADP-T1-E3 (Lead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current °C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c Symbol Tstg secs Steady State Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes: Surface Mounted Board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components.
Document Number: 73164 S-51566-Rev. 03-Apr-06
www.vishay.com
Si7858ADP
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss td(on) td(off) di/dt A/µs VGEN 5700 2680 1280 VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 0.0020 0.0029 0.75 0.0026 0.0037 0.95 Symbol Test Condition Unit
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless noted
thru
Drain Current
Drain Current
Drain-to-Source Voltage
Output Characteristics www.vishay.com
Gate-to-Source Voltage
Transfer Characteristics Document Number: 73164 S-51566-Rev. 03-Apr-06
Si7858ADP
TYPICAL CHARACTERISTICS
0.005
unless noted
8000 7000
DS(on) On-Resistance
0.004 Capacitance (pF) 6000 5000 4000 3000 2000 0.001 1000 0.000 Crss
Ciss
0.003
0.002
Coss
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage rDS(on) On-Resistance (Normalized)
Capacitance
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.015
On-Resistance Junction Temperature
DS(on) On-Resistance
Source Current
0.012
0.009
0.006 0.003
0.00 Source-to-Drain Voltage
0.000
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 73164 S-51566-Rev. 03-Apr-06
www.vishay.com
Si7858ADP
TYPICAL CHARACTERISTICS unless noted
GS(th) Variance Power
0.001
0.01
Time (sec)
Temperature (°C)
Threshold Voltage
Single Pulse Power
*Limited rDS(on) Drain Current
Single Pulse
0.01 0.01
Drain-to-Source Voltage *VGS minimum which rDS(on) specified
Safe Operating Area Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base thJA °C//W
Single Pulse 0.01 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
Document Number: 73164 S-51566-Rev. 03-Apr-06
Si7858ADP
TYPICAL CHARACTERISTICS unless noted
Normalized Effective Transient Thermal Impedance Duty Cycle
Single Pulse 0.05 0.02
0.01 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 73164 S-51566-Rev. 03-Apr-06
www.vishay.com
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
www.vishay.com

N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0026 0

Top Searches for this datasheet

Other recent searches