N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0037 0

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N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0037 0

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Si7856ADP
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 0.0037 0.0048 (Typ)
FEATURES
TrenchFET® Power MOSFET Optimized "Low Side" Synchronous Rectifier Operation Thermal Resistance PowerPAK® Package with 1.07-mm Profile Tested
Available
RoHS*
COMPLIANT
PowerPAK SO-8
APPLICATIONS
5.15
6.15
DC/DC Converters Synchronous Rectifiers
Bottom View Ordering Information: Si7856ADP-T1 Si7856ADP-T1-E3 (Lead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c 25°C 70°C 25°C 70°C Symbol Tstg secs Steady State Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Maximum Junction-to-Case (Drain)
Notes Surface Mounted Board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. containing terminations RoHS compliant, exemptions apply.
Document Number: 73157 S-51566-Rev. 07-Nov-05
www.vishay.com
Si7856ADP
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/µs VGEN 13.5 11.5 VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55°C 0.0029 0.0036 0.0037 0.0048 ±100 Symbol Test Condition Unit
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless noted
thru
Drain Current
Drain Current
125°C 25°C 55°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
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Document Number: 73157 S-51566-Rev. 07-Nov-05
Si7856ADP
TYPICAL CHARACTERISTICS
0.0075
unless noted
8000
On-Resistance
0.0060 Capacitance (pF)
6400
Ciss
0.0045
4800
0.0030
3200
DS(on)
0.0015
1600 Crss
Coss
0.0000
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage rDS(on) On-Resistance (Normalized)
Capacitance
Total Gate Charge (nC)
Junction Temperature
Gate Charge
0.025
On-Resistance Junction Temperature
Source Current
150°C
On-Resistance
0.020 0.015
25°C
0.010
DS(on) 0.00
0.005 0.000
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 73157 S-51566-Rev. 07-Nov-05
www.vishay.com
Si7856ADP
TYPICAL CHARACTERISTICS unless noted
Power GS(th) Variance
0.001
0.01
Time (sec)
Temperature
Threshold Voltage
Single Pulse Power
*Limited rDS(on) Drain Current
25°C Single Pulse
0.01 Drain-to-Source Voltage *VGS minimum which rDS(on) specified
Safe Operating Area Junction-to-Case
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base RthJA 50°C/W
Single Pulse 0.01 10-4 10-3 10-2 10-1
PDMZthJA(t) Surface Mounted
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73157 S-51566-Rev. 07-Nov-05
Si7856ADP
TYPICAL CHARACTERISTICS unless noted
Normalized Effective Transient Thermal Impedance Duty Cycle
Single Pulse 0.05 0.02
0.01 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 73157 S-51566-Rev. 07-Nov-05
www.vishay.com

N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0037 0

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