Dual N-Channel 2.5-V (G-S) Input Protected Load Switch PRODUCT SU

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Dual N-Channel 2.5-V (G-S) Input Protected Load Switch PRODUCT SU

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Si6926AEDQ
Dual N-Channel 2.5-V (G-S) Input Protected Load Switch
PRODUCT SUMMARY
rDS(on)
0.030 0.033 0.035
(Typ)
Protected
2000
FEATURES
rDS(on) Rating: Exceeds 2-kV Protection
DESCRIPTION
Si6926AEDQ dual n-channel MOSFET with protection gate over-voltage protection circuitry incorporated into MOSFET. device designed Lithium battery pack circuits. 2-stage input protection circuit unique design, consisting stages back-to-back zener diodes separated resistor. first stage diode designed absorb most energy. second stage diode designed protect gate from remaining energy over-voltages above gates inherent safe operating range. series resistor used limit current through second stage diode during over voltage conditions maximum value which limits input current maximum toff Si6926AEDQ been optimized battery load switch Lithium applications with advantage both 2.5-V rDS(on) rating safe 14-V gate-to-source maximum rating.
APPLICATION CIRCUITS
Overvoltage Protection Overvoltage Protection
typical value design. Battery Protection Circuit Typical Characteristics, Gate-Current Gate-Source Voltage, Page
Figure
Typical Lithium Battery Pack
Figure
Input Overvoltage Protection Circuit.
Document Number: 73090 S-41519-Rev. 11-Oct-04
www.vishay.com
Si6926AEDQ
FUNCTIONAL BLOCK DIAGRAM CONFIGURATION
TSSOP-8
View Ordering Information: Si6926AEDQ-T1-E3 N-Channel N-Channel
Figure
Figure
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage, Source-Drain Voltage Gate-Source Voltage Continuous Drain Source Current 150_C)a Drain-to-Source Pulsed Drain-to-Source Current Pulsed Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
Tstg
0.83 0.64
Steady State
Unit
0.69 0.83 0.53
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes Surface Mounted Board. www.vishay.com Document Number: 73090 S-41519-Rev. 11-Oct-04 Steady State Steady State RthJA RthJF
Symbol
Typical
Maximum
Unit
_C/W
Si6926AEDQ
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS IDSS ID(on) VGS, "4.5 55_C Drain Source State Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb rDS(on) 0.83 0.023 0.025 0.027 0.65 0.030 0.033 0.035
Symbol
Test Condition
Unit
Zero Gate Voltage Drain Current On-State Drain Currentb
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) td(off) VGEN 0.43
Notes Guaranteed design, subject production testing. Pulse test; pulse width duty cycle Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current Gate-Source Voltage
100,000 10,000
Gate Current Gate-Source Voltage
Gate Current (mA)
Gate Current (mA)
1,000 0.01 25_C 150_C
Gate-to-Source Voltage Document Number: 73090 S-41519-Rev. 11-Oct-04
0.001 Gate-to-Source Voltage www.vishay.com
Si6926AEDQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C -55_C 1.00 1.25 1.50 1.75 2.00
Drain-to-Source Voltage
0.00
0.25
0.50
0.75
Gate-to-Source Voltage
On-Resistance Drain Current
0.05 12.0 16.0 20.0
Gate Charge
DS(on) On-Resistance
0.04 0.03
0.02
0.01
0.00
Gate-to-Source Voltage
Drain Current
Total Gate Charge (nC)
On-Resistance Junction Temperature
rDS(on) On-Resiistance (Normalized) Source Current
Source-Drain Diode Forward Voltage
150_C
25_C
Junction Temperature (_C)
Source-to-Drain Voltage Document Number: 73090 S-41519-Rev. 11-Oct-04
www.vishay.com
Si6926AEDQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Gate-to-Source Voltage
0.08 0.07 DS(on) On-Resistance 0.06 0.05 0.04 0.03 0.02 0.01 0.00 Gate-to-Source Voltage -0.3 -0.4 GS(th) Variance -0.0 -0.1 -0.2
Threshold Voltage
Temperature (_C)
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Case
*Limited rDS(on) Limited
Power Drain Current ID(on) Limited 25_C Single Pulse BVDSS Limited
10-3
0.01 10-2 10-1 Time (sec)
Drain-to-Source Voltage *VGS minimum which rDS(on) specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Notes:
Duty Cycle,
Unit Base RthJA 126_C/W PDMZthJA(t) Surface Mounted
Document Number: 73090 S-41519-Rev. 11-Oct-04
www.vishay.com
Si6926AEDQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02
0.01 10-4
Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data, www.vishay.com Document Number: 73090 S-41519-Rev. 11-Oct-04

Dual N-Channel 2.5-V (G-S) Input Protected Load Switch PRODUCT SU

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