N-Channel Reduced Fast Switching MOSFET rDS(on) 0.008 0.011

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N-Channel Reduced Fast Switching MOSFET rDS(on) 0.008 0.011

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Si7860DP
N-Channel Reduced Fast Switching MOSFET
rDS(on) 0.008 0.011
FEATURES
TrenchFET® Power MOSFET Optimized High Efficiency
Available
RoHS* Thermal Resistance COMPLIANT PowerPAK® Package with 1.07 Profile Tested
APPLICATIONS
Buck Converter High Side Side Synchronous Rectifier Secondary Rectifier
PowerPAK SO-8
6.15
5.15
Bottom View Ordering Information: Si7860DP-T1 Si7860DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current °C)a Pulsed Drain Current Continuous Source Current (Diode Continuous)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)
Symbol Tstg
secs
Steady State
Unit
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) Steady State Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes: Surface Mounted Board. Solder Profile PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. containing terminations RoHS compliant, exemptions apply. Document Number: 71854 S-52555-Rev. 19-Dec-05 www.vishay.com
Si7860DP
SPECIFICATIONS unless otherwise noted
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/µs VGEN VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 0.0066 0.0090 0.70 0.008 0.011 Symbol Test Conditions Unit
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
TYPICAL CHARACTERISTICS unless noted
thru Drain Current Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
www.vishay.com
Document Number: 71854 S-52555-Rev. 19-Dec-05
Si7860DP
TYPICAL CHARACTERISTICS
0.015
unless noted
2500
DS(on) On-Resistance
0.012 0.009 0.006 Capacitance (pF)
2000
Ciss
1500
1000 Coss Crss
0.003
0.000
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage DS(on) On-Resistance (Normalized) 2.00
Capacitance
1.75
1.50
1.25
1.00
0.75
0.50
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge
0.040
On-Resistance Junction Temperature
DS(on) On-Resistance
0.032
Source Current
0.024
0.016 0.008
0.00
0.000
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
Document Number: 71854 S-52555-Rev. 19-Dec-05
www.vishay.com
Si7860DP
TYPICAL CHARACTERISTICS unless noted
GS(th) Variance Power
Temperature (°C)
0.001
0.01
Time (sec)
Threshold Voltage
Normalized Effective Transient Thermal Impedance Duty Cycle
Single Pulse Power, Junction-to-Ambient
Notes:
0.05
0.02
Duty Cycle,
Unit Base thJA
Single Pulse 0.01 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02 Single Pulse 0.01
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
www.vishay.com
Document Number: 71854 S-52555-Rev. 19-Dec-05

N-Channel Reduced Fast Switching MOSFET rDS(on) 0.008 0.011

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