N-Channel 2.5-V (G-S) Battery Switch rDS(on) 0.053 0.075

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-Channel 2.5-V (G-S) Battery Switch rDS(on) 0.053 0.075

Datasheet Thumbnail

Top Searches for this datasheet

Si6954ADQ
N-Channel 2.5-V (G-S) Battery Switch
rDS(on)
0.053 0.075
TSSOP-8
View Ordering Information: Si6954ADQ-T1 N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
Tstg
secs
0.83 0.96
Steady State
Unit
0.69 0.83 0.53
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes Surface Mounted Board. Document Number: 71130 S-31989-Rev. 13-Oct-03 www.siliconix.com Steady State Steady State
Symbol
RthJA RthJF
Typical
Maximum
Unit
_C/W
Si6954ADQ
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55_C 0.83 0.044 0.062 0.053 0.075
Symbol
Test Condition
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) 0.83 di/dt A/ms VGEN
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C 55_C
Drain-to-Source Voltage
Gate-to-Source Voltage
www.siliconix.com FaxBack 408-970-5600
Document Number: 71130 S-31989-Rev. 13-Oct-03
Si6954ADQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.15 DS(on) On-Resistance Capacitance (pF) Ciss Crss Coss
Capacitance
0.12
0.09
0.06
0.03
0.00
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
Total Gate Charge (nC)
DS(on) On-Resistance (Normalized)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
150_C Source Current DS(on) On-Resistance 0.15
On-Resistance Gate-to-Source Voltage
0.12
0.09
25_C
0.06
0.03
0.00 Source-to-Drain Voltage Gate-to-Source Voltage
Document Number: 71130 S-31989-Rev. 13-Oct-03
www.siliconix.com
Si6954ADQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
GS(th) Variance Power
Single Pulse Power, Junction-to-Ambient
Time (sec)
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02 Single Pulse 0.01 Square Wave Pulse Duration (sec)
Notes: Duty Cycle,
Unit Base RthJA 126_C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05 0.02
0.01
Single Pulse Square Wave Pulse Duration (sec)
www.siliconix.com FaxBack 408-970-5600
Document Number: 71130 S-31989-Rev. 13-Oct-03
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
www.vishay.com

N-Channel 2.5-V (G-S) Battery Switch rDS(on) 0.053 0.075

Top Searches for this datasheet

Other recent searches