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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4922BDY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.4618 11.1535 42.9409 52.4438 Ambient 1.5141 10.1484 25.8725 1.3501 Case Case Foot 10.8734 2.6037 7.5331 18.9898 Foot 11.5317 1.0016 8.8518 44.6029
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 73962 Revision: 12-Jun-07
www.vishay.com
Si4922BDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 12.7092 29.4888 18.5746 49.2274 Ambient 2.8419 13.0469 60.0334 1.2807
Case Case
Foot 3.4606 17.9065 13.8033 4.8296 Foot 675.8404 3.5607 25.6769 105.2815
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 73962 Revision: 12-Jun-07
Si4922BDY_RC
Document Number: 73962 Revision: 12-Jun-07
www.vishay.com

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