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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4845DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 55.7768 27.6343 28.6623 7.9266 Ambient 1.6762 108.3584 12.2944 865.6593 Case Case Foot 12.6236 5.1966 6.3099 20.8699 Foot 7.6376 245.7523 10.8991 47.9345
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74628 Revision: 14-May-07
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Si4845DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 9.9293 35.6105 23.6406 50.8206 Ambient 991.3878 11.0310 139.4146 1.7139
Case Case
Foot 5.5579 17.6774 8.2896 13.4751 Foot 239.4860 3.5233 12.8456 58.7674
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 74628 Revision: 14-May-07
Si4845DY_RC
Document Number: 74628 Revision: 14-May-07
www.vishay.com

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