Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4650DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.5372 27.8770 20.1395 56.4463 Ambient 2.3286 54.2793 12.1622 1.3383 Case Case Foot 13.5384 3.1354 8.3301 14.9961 Foot 7.5561 2.0729 209.1380 43.9567
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 74686 Revision: 09-May-07
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Si4650DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 9.4879 28.9659 20.1927 51.3535 Ambient 2.2280 9.6163 100.7188 1.4247
Case Case
Foot 2.9606 17.3231 16.0548 3.6615 Foot 685.4423 5.0699 30.9504 727.2935
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 74686 Revision: 09-May-07
Si4650DY_RC
Document Number: 74686 Revision: 09-May-07
www.vishay.com
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