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RN2107F,RN2108F,RN2109F With built-in bias resistors Simplify cir


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RN2107F~RN2109F
RN2107F,RN2108F,RN2109F
With built-in bias resistors Simplify circuit design Reduce quantity parts manufacturing process Complementary RN1107F~RN1109F Unit
Equivalent Circuit Bias Resister Values
Type RN2107F RN2108F RN2109F
JEDEC EIAJ TOSHIBA Weight:
Symbol RN2107F ~RN2109F RN2107F Emitter-base voltage RN2108F RN2109F Collector current Collector power dissipation Junction temperature Storage temperature range RN2107F ~RN2109F Tstg VEBO VCBO VCEO Rating -100 -55~150 Unit
2-2HA1A
Maximum Ratings 25°C)
Characteristic Collector-base voltage Collector-emitter voltage
000707EAA1
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2001-02-08
RN2107F~RN2109F
Electrical Characteristics 25°C)
Characteristic Collector cut-off current RN2107F ~RN2109F RN2107F Emitter cut-off current RN2108F RN2109F RN2107F current gain RN2108F RN2109F Collector-emitter saturation voltage RN2107F ~RN2109F RN2107F Input voltage (ON) RN2108F RN2109F RN2107F Input voltage (OFF) RN2108F RN2109F Transition frequency Collector Output capacitance RN2107F ~RN2109F RN2107F ~RN2109F RN2107F Input resistor RN2108F RN2109F RN2107F Resistor ratio RN2108F RN2109F R1/R2 -10V, -5mA -10V, 1MHz (OFF) -5V, -0.1mA (ON) -0.2V, -5mA (sat) -5mA, -0.25mA -5V, -10mA IEBO Symbol ICBO ICEO Test Circuit Test Condition -50V, -50V, -6V, -7V, -15V, -0.081 -0.078 -0.167 -0.7 -1.0 -2.2 -0.5 -0.6 -1.5 15.4 32.9 0.191 0.421 1.92 Typ. -0.1 0.213 0.468 2.14 -100 -500 -0.15 -0.145 -0.311 -0.3 -1.8 -2.6 -5.8 -1.0 -1.16 -2.6 28.6 61.1 0.232 0.515 2.35 Unit
2001-02-08
RN2107F~RN2109F
2001-02-08
RN2107F~RN2109F
2001-02-08
RN2107F~RN2109F
Type Name
Marking
RN2107F
RN2108F
RN2109F
2001-02-08

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