N-channel 0.032 SMD-0.5 Rad-hard gate charge STripFETPower MOSFET

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N-channel 0.032 SMD-0.5 Rad-hard gate charge STripFETPower MOSFET

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STRH40N6SY3
N-channel 0.032 SMD-0.5 Rad-hard gate charge STripFETPower MOSFET
Type STRH40N6SY3
VDSS
RDS(on) Fast switching Single event effect (SEE) hardned total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy 100kRad SEGR with ions SMD-0.5
Internal schematic diagram
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process specifically been designed sustain high provide immunity heavy effects. therefore suitable power switch mainly highefficiency DC-DC converters. also intended application with gate charge drive requirements.
Applications
Satellite High reliability
Order codes
Part number STRH40N6SY1 STRH40N6SY3
temp range Space flights parts (full flow screening)
Marking RH40N6SY1 RH40N6SY3
Package SMD-0.5 SMD-0.5
Packaging Individual strip pack Individual strip pack
March 2007
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www.st.com
Contents
STRH40N6SY3
Contents
Electrical ratings Electrical characteristics
Pre-irradiation Post-irradiation Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
2/12
STRH40N6SY3
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS Gate-source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Total dissipation 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value Unit V/ns
PTOT PTOT
dv/dt Tstg
Rated according Rthj-case Rthc-s Pulse width limited safe operating area Rated according Rthj-amb 40A, di/dt 1060A/µs, 80%V(BR)DSS
Table
Symbol Rthj-case Rthc-s
Thermal data
Parameter Thermal resistance junction-case Case-to-sink Value 1.67 0.21 Unit °C/W °C/W °C/W
Rthj-amb(1) Thermal resistance junction -amb
When mounted heat sink t<10sec
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Repetitive avalanche Value Unit
3/12
Electrical characteristics
STRH40N6SY3
Electrical characteristics
(TCASE 25°C unless otherwise specified)
Pre-irradiation
Table
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-to-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss ±14V =VGS, 0.032 0.034 Min. Typ. Max.
±100
Unit
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-to-source charge Gate-to-drain ("Miller") charge Gate input resistance Test conditions 25V, f=1MHz Min. Typ. 2030 Max. Unit
30V, 20A, VGS=12V f=1MHz Gate Bias=0 Test signal level=20mV open drain
12.5
17.5
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Unit
30V, 20A, 4.7,
4/12
STRH40N6SY3
Electrical characteristics
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 40A, 40A, di/dt 100A/µs VDD= 30V, 25°C 40A, di/dt 100A/µs VDD= 30V, 150°C Test conditions Min. Typ. Unit
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
Post-irradiation
Rad-Hard Power MOSFETs tested verify radiation capability. technology extremely resistant assurance well functioning device inside radiation environments. Every manufacturing tested total ionizing dose. (@Tj=25°C 100Krad (a)) Table
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-to-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss ±14V =VGS, 0.032 0.034 Min. Typ.
±100
Unit
According ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
5/12
Electrical characteristics
STRH40N6SY3
Table
Single event effect, SOA(1)
(Mev/(mg/cm2)) 55.9 Energy (MeV) Range (µm) @VGS0V
Rad-Hard Power MOSFETs have been characterized heavy environment single event effect (SEE). Single event effect characterization illustrated
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 40A, 40A, di/dt 100A/µs VDD= 30V, 25°C 40A, di/dt 100A/µs VDD= 30V, 150°C Test conditions Min. Typ. Unit
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
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STRH40N6SY3
Electrical characteristics
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Gate charge gate-source voltage Figure
Capacitance variations
7/12
Electrical characteristics Figure Normalized BVDSS temperature Figure
STRH40N6SY3 Static drain-source resistance
Figure
Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source drain-diode forward characteristics
8/12
STRH40N6SY3
Test circuit
Test circuit
Figure Switching times test circuit resistive load
driver slope 1V/ns DUT)
9/12
Package mechanical data
STRH40N6SY3
Package mechanical data
SMD-0.5 MECHANICAL DATA
DIM. 0.76 7.52 1.91 MIN. 3.00 0.38 7.26 5.72 2.41 3.05 10.16 0.030 0.296 0.075 MAX. MIN. inch TYP. 0.118 0.015 0.286 0.225 0.095 0.120 0.400 MAX.
7386434A
10/12
STRH40N6SY3
Revision history
Revision history
Table
Date 13-Jul-2006 18-Dec-2006 15-Mar-2007
Revision history
Revision First release value Table On/off states Complete version Changes
11/12
STRH40N6SY3
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N-channel 0.032 SMD-0.5 Rad-hard gate charge STripFETPower MOSFET

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