P-channel 100V 0.265 TO-257AA Rad-hard gate charge STripFETPower MOSFE

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P-channel 100V 0.265 TO-257AA Rad-hard gate charge STripFETPower MOSFE

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STRH12P10ESY3
P-channel 100V 0.265 TO-257AA Rad-hard gate charge STripFETPower MOSFET
Type STRH12P10ESY3
VDSS 100V
RDS(on) Fast switching Single event effect (SEE) hardned total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy 100kRad SEGR with ions TO-257AA
Internal schematic diagram
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process specifically been designed sustain high provide immunity heavy effects. therefore suitable power switch mainly highefficiency DC-DC converters. also intended application with gate charge drive requirements.
Application
Satellite High reliability
Order codes
Part number STRH12P10ESY1 STRH12P10ESY3
temp range Space flights parts (full flow screening)
Marking RH12P10ESY1 RH12P10ESY3
Package TO-257AA TO-257AA
Packaging Individual strip pack Individual strip pack
March 2007
1/12
www.st.com
Contents
STRH12P10ESY3
Contents
Electrical ratings Electrical characteristics
Pre-irradiation Post-irradiation Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
2/12
STRH12P10ESY3
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS Gate-source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Value Unit V/ns
PTOT
dv/dt Peak diode recovery voltage slope Tstg Storage temperature Max. operating junction temperature
Rated according Rthj-case Rthc-s Pulse width limited safe operating area 12A, di/dt 36A/µs, 80%V(BR)DSS
Table
Symbol
Thermal data
Parameter Value 1.47 62.5 Unit °C/W °C/W °C/W
Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink
Rthj-amb Thermal resistance junction -amb
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited Max) Single pulse avalanche energy (starting Tj=25°C, ID=IAR, VDD=50V) Repetitive avalanche Value Unit
Note:
P-channel MOSFET actual polarity voltages current reversed
3/12
Electrical characteristics
STRH12P10ESY3
Electrical characteristics
(TCASE 25°C unless otherwise specified)
Pre-irradiation
Table
Symbol IDSS IGSS V(BR)DSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss ±18V 250µA, =VGS, 12V, 0.265 Min. Typ.
±100
Unit
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions 25V, f=1MHz, VGS=0V 50V, VGS=12V f=1MHz Gate Bias=0 Test signal level=20mV open drain Min. Typ. 1303 65.6 Unit
Gate input resistance
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Unit
80V, 12A, 4.7,
4/12
STRH12P10ESY3
Electrical characteristics
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 12A, 12A, di/dt 100A/µs VDD= 25°C 12A, di/dt 100A/µs VDD= 150°C Test conditions Min. Typ. Unit
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
Post-irradiation
Rad-Hard Power MOSFETs tested verify radiation capability. technology extremely resistant assurance well functioning device inside radiation environments. Every manufacturing tested total ionizing dose. (@Tj=25°C 100Krad (a)) Table
Symbol IDSS IGSS V(BR)DSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss ±18V 250µA, =VGS, 12V, 0.265 Min. Typ.
±100
Unit
According ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.
5/12
Electrical characteristics
STRH12P10ESY3
Table
Single event effect, SOA(1)
(Mev/(mg/cm2)) 55.9 Energy (MeV) Range (µm) @VGS0V
Rad-Hard Power MOSFETs have been characterized heavy environment single event effect (SEE). Single event effect characterization illustrated
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 12A, 12A, di/dt 100A/µs VDD= 25°C 12A, di/dt 100A/µs VDD= 150°C Test conditions Min. Typ. Unit
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
6/12
STRH12P10ESY3
Electrical characteristics
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Gate charge gate-source voltage Figure
Capacitance variations
7/12
Electrical characteristics Figure Normalized BVDSS temperature Figure
STRH12P10ESY3 Static drain-source resistance
Figure
Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source drain-diode forward characteristics
8/12
STRH12P10ESY3
Test circuit
Test circuit
Figure Switching times test circuit resistive load
driver slope 1V/ns DUT)
9/12
Package mechanical data
STRH12P10ESY3
Package mechanical data
TO-257AA MECHANICAL DATA
DIM. 1.65 15.2 2.29 0.71 0.065 3.56 1.02 3.68 13.51 5.26 0.76 3.05 2.54 16.5 0.598 0.090 0.028 3.81 0.140 MIN. 10.54 10.54 16.64 5.33 0.185 0.40 0.145 0.532 0.207 0.030 0.120 0.100 0.650 0.150 MAX. MIN. inch TYP. 0.415 0.415 0.655 0.210 MAX.
0117268C
10/12
STRH12P10ESY3
Revision history
Revision history
Table
Date 20-Dec-2006 19-Mar-2007
Revision history
Revision First release Complete version Changes
11/12
STRH12P10ESY3
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P-channel 100V 0.265 TO-257AA Rad-hard gate charge STripFETPower MOSFE

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