N-channel 250V 0.95 TO-257AA Rad-hard gate charge STripFETPower MOSFET

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N-channel 250V 0.95 TO-257AA Rad-hard gate charge STripFETPower MOSFET

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STRH10N25ESY3
N-channel 250V 0.95 TO-257AA Rad-hard gate charge STripFETPower MOSFET
Type STRH10N25ESY3
VDSS 250V
RDS(on) Fast switching Single event effect (SEE) hardned total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy 100kRad SEGR with ions TO-257AA
Internal schematic diagram
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process specifically been designed sustain high provide immunity heavy effects. therefore suitable power switch mainly highefficiency DC-DC converters. also intended application with gate charge drive requirements.
Applications
Satellite High reliability applications
Order codes
Part number STRH10N25ESY1 STRH10N25ESY3
temp range Space flights parts (full flow screening)
Marking RH10N25ESY1 RH10N25ESY3
Package TO-257AA TO-257AA
Packaging Tube Tube
March 2007
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www.st.com
Contents
STRH10N25ESY3
Contents
Electrical ratings Electrical characteristics
Pre-irradiation Radiation characteristics Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
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STRH10N25ESY3
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS Gate-source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value Unit V/ns
PTOT
dv/dt Tstg
Rated according Rthj-case Pulse width limited safe operating area 12A, di/dt 300A/µs, 80%V(BR)DSS
Table
Symbol
Thermal data
Parameter Value 1.47 62.5 Unit °C/W °C/W °C/W
Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink
Rthj-amb Thermal resistance junction -amb
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Repetitive avalanche Value Unit
3/12
Electrical characteristics
STRH10N25ESY3
Electrical characteristics
(TCASE 25°C unless otherwise specified)
Pre-irradiation
Table
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-to-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss ±16V 1mA, =VGS, 12V, 0.95 Min. Typ. Max.
±100
Unit
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-to-source charge Gate-to-drain ("Miller") charge Gate input resistance Test conditions f=1MHz, VGS=12V Min. Typ. Max. Unit
200V, VGS=12V f=1MHz Gate Bias=0 Test signal level=20mV open drain
4/12
STRH10N25ESY3
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Unit
125V, 10A, 4.7,
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 10A, 12A, di/dt 100A/µs VDD= 62V, 25°C 12A, di/dt 100A/µs VDD= 62V, 150°C 19.5 Test conditions Min. Typ. Unit
IRRM IRRM
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
Radiation characteristics
Rad-Hard Power MOSFETs tested verify radiation capability. technology extremely resistant assurance well functioning device inside radiation environments. Every manufacturing tested total ionizing dose. (@Tj=25°C 100Krad (a)) Table
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-to-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss ±16V 1mA, =VGS, 12V, 0.95 Min. Typ. Max.
±100
Unit
According ESCC 22900 specification, Co60 gamma rays, dose rags:0.01rad/sec.
5/12
Electrical characteristics
STRH10N25ESY3
Table
Single event effect, SOA(1)
(Mev/(mg/cm2)) 55.9 Energy (MeV) Range (µm) @VGS0V
Rad-Hard Power MOSFETs have been characterized heavy environment single event effect (SEE). Single event effect characterization illustrate
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 10A, 12A, di/dt 100A/µs VDD= 62V, 25°C 12A, di/dt 100A/µs VDD= 62V, 150°C 19.5 Test conditions Min. Typ. Unit
Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
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STRH10N25ESY3
Electrical characteristics
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Gate charge gate-source voltage Figure
Capacitance variations
7/12
Electrical characteristics Figure Normalized BVDSS temperature Figure
STRH10N25ESY3 Static drain-source resistance
Figure
Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source drain-diode forward characteristics
8/12
STRH10N25ESY3
Test circuit
Test circuit
Figure Switching times test circuit resistive load
driver slope 1V/ns DUT)
9/12
Package mechanical data
STRH10N25ESY3
Package mechanical data
TO-257AA MECHANICAL DATA
DIM. 1.65 15.2 2.29 0.71 0.065 3.56 1.02 3.68 13.51 5.26 0.76 3.05 2.54 16.5 0.598 0.090 0.028 3.81 0.140 MIN. 10.54 10.54 16.64 5.33 0.185 0.40 0.145 0.532 0.207 0.030 0.120 0.100 0.650 0.150 MAX. MIN. inch TYP. 0.415 0.415 0.655 0.210 MAX.
0117268C
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STRH10N25ESY3
Revision history
Revision history
Table
Date 18-Dec-2006 26-Mar-2007
Revision history
Revision First release Complete version Changes
11/12
STRH10N25ESY3
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N-channel 250V 0.95 TO-257AA Rad-hard gate charge STripFETPower MOSFET

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