N-channel 0.011 TO-254AA Rad-hard gate charge STripFETPower MOSFET

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N-channel 0.011 TO-254AA Rad-hard gate charge STripFETPower MOSFET

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STRH100N6FSY3
N-channel 0.011 TO-254AA Rad-hard gate charge STripFETPower MOSFET
Type STRH100N6FSY3
VDSS
RDS(on) Fast switching Single event effect (SEE) hardned total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy 100kRad SEGR with ions
TO-254AA
Internal schematic diagram
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process specifically been designed sustain high provide immunity heavy effects. therefore suitable power switch mainly highefficiency DC-DC converters. also intended application with gate charge drive requirements.
Applications
Satellite High reliability
Order codes
Part number STRH100N6FSY1 STRH100N6FSY3
temp range Space flights parts (full flow screening)
Marking RH100N6FSY1 RH100N6FSY3
Package TO-254AA TO-254AA
Packaging Individual strip pack Individual strip pack
March 2007
1/12
www.st.com
Contents
STRH100N6FSY3
Contents
Electrical ratings Electrical characteristics
Pre-irradiation Post-irradiation Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
2/12
STRH100N6FSY3
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS Gate-source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value Unit V/ns
PTOT
dv/dt Tstg
This value limited package Pulse width limited safe operating area This value rated according Rthj-case Rthc-s 80A, di/dt 600A/µs, 80%V(BR)DSS
Table
Symbol
Thermal data
Parameter Value 0.52 0.21 Unit °C/W °C/W °C/W
Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink
Rthj-amb Thermal resistance junction-amb
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=32V) Repetitive avalanche Value 1374 Unit
3/12
Electrical characteristics
STRH100N6FSY3
Electrical characteristics
(TCASE 25°C unless otherwise specified)
Pre-irradiation
Table
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS Gate body leakage current (VDS Drain-to-source breakdown voltage Gate threshold voltage Static drain-source resistance Test conditions BVDss ±14V =VGS, 0.011 0.012 Min. Typ. Max.
±100
Unit
Table
Symbol Ciss Coss Crss
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-to-source charge Gate-to-drain ("Miller") charge Gate input resistance Test conditions Min. Typ. 6800 1128 178.5 32.6 Max. Unit
25V, f=1MHz
30V, 40A, VGS=12V f=1MHz Gate Bias=0 Test signal level=20mV open drain
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Unit
30V, 40A, 4.7,
4/12
STRH100N6FSY3
Electrical characteristics
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 80A, 80A, di/dt 100A/µs VDD= 30V, 25°C 80A, di/dt 100A/µs VDD= 30V, 150°C 30.8 Test conditions Min. Typ. Unit
This value limited package Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
Post-irradiation
Rad-Hard Power MOSFETs tested verify radiation capability. technology extremely resistant assurance well functioning device inside radiation environments. Every manufacturing tested total ionizing dose. (@Tj=25°C 100Krad (a)) Table
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)
On/off states
Parameter Test conditions Min. Typ. Max. Unit
±100
Zero gate voltage drain current BVDss (VGS Gate body leakage current (VDS Drain-to-source breakdown voltage Gate threshold voltage Static drain-source resistance ±14V =VGS,
0.011 0.012
According ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
5/12
Electrical characteristics
STRH100N6FSY3
Table
Single event effect, SOA(1)
(Mev/(mg/cm2)) 55.9 Energy (MeV) Range (µm) @VGS0V
Rad-Hard Power MOSFETs have been characterized heavy environment single event effect (SEE). Single event effect characterization illustrated
Table
Symbol ISDM IRRM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 80A, 80A, di/dt 100A/µs VDD= 30V, 25°C 80A, di/dt 100A/µs VDD= 30V, 150°C 30.8 Test conditions Min. Typ. Unit
This value limited package Pulse width limited safe operating area Pulsed: pulse duration 300µs, duty cycle 1.5%
6/12
STRH100N6FSY3
Electrical characteristics
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Gate charge gate-source voltage Figure
Capacitance variations
7/12
Electrical characteristics Figure Normalized BVDSS temperature Figure
STRH100N6FSY3 Static drain-source resistance
Figure
Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source drain-diode forward characteristics
8/12
STRH100N6FSY3
Test circuit
Test circuit
Figure Switching times test circuit resistive load
driver slope 1V/ns DUT)
9/12
Package mechanical data
STRH100N6FSY3
Package mechanical data
TO-254AA MECHANICAL DATA
MIN. 13.59 13.59 20.07 6.32 1.02 3.53 16.89 6.86 0.89 3.81 3.81 12.95 3.05 0.71 1.65 0.065 14.50 0.510 0.120 0.025 0.040 1.14 0.035 0.150 0.150 0.570 MAX. 13.84 13.84 20.32 6.60 1.27 3.78 17.40 MIN. 0.535 0.535 0.790 0.249 0.040 0.139 0.665 0.270 0.045 inch TYP. MAX. 0.545 0.545 0.80 0.260 0.050 0.149 0.685
DIM.
10/12
STRH100N6FSY3
Revision history
Revision history
Table
Date 03-Jul-2006 18-Dec-2006 15-Mar-2007
Revision history
Revision First release Figure been updated Complete version Changes
11/12
STRH100N6FSY3
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N-channel 0.011 TO-254AA Rad-hard gate charge STripFETPower MOSFET

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