Silicon Epitaxial Planar Transistor switching amplifier applications.

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Silicon Epitaxial Planar Transistor switching amplifier applications.

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8050
Silicon Epitaxial Planar Transistor switching amplifier applications. Especially suitable AF-driver stages power output stages. transistor subdivided into four groups, according current gain. complementary type transistor 8550 recommended. special request, these transistors manufactured different configurations.
Absolute Maximum Ratings Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Value
Unit
VCEO VCBO VEBO Ptot
+150
Valid provided that leads kept ambient temperature distance from case
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 01/09/2003
8050
Characteristics Tamb=25 Symbol Current Gain VCE=1V, IC=100mA 8050B 8050C 8050D 8050E VCE=1V, IC=350mA Collector Cutoff Current VCB=35V Collector Saturation Voltage IC=500mA, IB=50mA Base Saturation Voltage IC=500mA, IB=50mA Collector Emitter Breakdown Voltage IC=2mA Collector Base Breakdown Voltage IC=10µA Emitter Base Breakdown Voltage IE=100µA Gain Bandwidth Product VCE=5V, IC=10mA, f=50MHz Collector Base Capacitance VCB=10V, f=1MHz Thermal Resistance Junction Ambient
Min.
Typ.
Max.
Unit
ICBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO CCBO RthA
Valid provided that leads kept ambient temperature distance from case
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 01/09/2003
8050
Admissible power dissipation versus ambient temperature
Valid provided that leads kept ambient temperature distance from case
Collector current versus base emitter voltage
typical limits Tamb=25o
Tamb
Pulse thermal resistance versus pulse duration
Valid provided that leads kept ambient temperature distance from case
Gain bandwidth product versus collector current
Tamb=25 f=20MHz
0.05
VCE=5V
0.01
0.02
0.005
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 01/09/2003
8050
ollector saturation voltag versu collecto current
ical =25o
current gain versus collector current
1000
Base saturation voltage versus collector current
itter collector characteristics
typical b=25o
0.2m
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 01/09/2003
8050
Common emitter collector characteristics
0.35
Common emitter collector characteristics
0.85
0.25
0.15
=0.05mA
0.75
=0.7V
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 01/09/2003

Silicon Epitaxial Planar Transistor switching amplifier applications.

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