Silicon Epitaxial Planar Transistor switching amplifier applications.
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1702
Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into five groups, according current gain. special request, these transistors manufactured different configurations.
Absolute Maximum Ratings Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO Ptot Value +150 Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
1702
Characteristics Tamb=25 Symbol Current Gain VCE=1V, IC=100mA Current Gain Group Collector Base Breakdown Voltage IC=10µA Collector Emitter Breakdown Voltage IC=10mA Emitter Base Breakdown Voltage IE=100µA Collector Cutoff Current VCB=20V Collector Saturation Voltage IC=500mA, IB=50mA Gain Bandwidth Product VCE=5V, IC=10mA Output Capacitance VCB=5V, f=1MHz Noise Figure VCE=6V, IE=0.5mA f=1KHz, RS=500 VCE(sat) ICBO V(BR)EBO V(BR)CEO V(BR)CBO Min. Typ. Max. Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
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