Silicon Epitaxial Planar Transistor Switching amplifier application sp
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BC635 BC637 BC639
Silicon Epitaxial Planar Transistor Switching amplifier application special request, these transistors manufactured different configurations.
TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Symbol Collector Emitter Voltage RBE=1K BC635 BC637 BC639 Collector Emitter Voltage BC635 BC637 BC639 Collector Emitter Voltage BC635 BC637 BC639 Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCER VCER VCER VCES VCES VCES VCEO VCEO VCEO VEBO Ptot Value +150 Unit
PW=5ms,Duty Cycle =10% FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
BC635 BC637 BC639
Characteristics Tamb=25 Symbol Current Gain. VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA Collector Emitter Breakdown Voltage IC=10mA BC635 BC637 BC639 Collector Saturation Voltage IC=500mA, IB=50mA Collector Cutoff Current VCB=30V Emitter Cutoff Current Base Emitter Voltage VCE=2V, IC=500mA Transition Frequency VCE=5V,IC=10mA,F=50MHz VBE(on) VCEsat V(BR)CEO V(BR)CEO V(BR)CEO BC635 BC637/BC639 Min. Typ. Max. Unit
ICBO
IEBO
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
BC635 BC637 BC639
Static Characteristics
1.8m
(mA)
Current Gain
1.6m 1.4m 1.2m 1.0m 0.8m 0.6m 0.4m
Collector Current
=0.2 Collector itter Voltage
Current Gain
Collector Current (mA)
Base Emitter Saturation Voltage Collector Emitter Saturation Voltage
Base Emitter Voltage
Saturation Voltage CE(sat), BE(sat)
Collector Current (mA)
Base Emitter Voltage
Collector Output Capacitance
Capacitance (pF)
Collector Base Voltage
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
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