Silicon Transistor 2SD1616 2SD1616A designed driver output stages ampl
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2SD1616 2SD1616A
Silicon Transistor 2SD1616 2SD1616A designed driver output stages amplifier general purpose application. transistor subdivided into three groups according current gain special request, these transistors manufactured different configurations.
Absolute Maximum Ratings Symbol Collector Base Voltage 2SD1616 2SD1616A 2SD1616 2SD1616A VCBO Value 0.75 +150 Unit
Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (pulse) Power Dissipation Junction Temperature Storage Temperature Range PW10ms, Duty Cycle50%
VCEO VEBO Ptot
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
2SD1616 2SD1616A
Characteristics Tamb=25 Symbol Current Gain
Min.
Typ.
Max.
Unit
VCE=2V, IC=100mA
VCE=2V, IC=1A Base Emitter Voltage
VCE=2V ,IC=50mA Collector Cutoff Current VCB=60V/120V Emitter Cutoff Current VEB=6V Collector Saturation Voltage IC=1A, IB=50mA Base Saturation Voltage IC=1A, IB=50mA Gain Bandwidth Product VCE=2V, IC=-100mA Output Capacitance VCB=10V, f=1MHz Turn-on Time Storage Time Fall Time VCC=10V, IC=-100mA IB1=-IB2=10 VBE(off)=-2
ICBO IEBO VCE(sat) VBE(sat) tstg
0.15 0.07 0.95 0.07
Pulsed PW350µs, Duty Cycle2%
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
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