Silicon Epitaxial Planar Transistor General Purpose Amplifier gen

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Silicon Epitaxial Planar Transistor General Purpose Amplifier gen

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2N3416 2N3417
Silicon Epitaxial Planar Transistor General Purpose Amplifier
general purpose amplifiers switches requiring collector current
Absolute Maximum Ratings* Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Total Device Dissipation Derate above Junction Temperature Storage Temperature Range
Value +150
Unit
VCEO VCBO VEBO Ptot
*These ratings limiting values above which serviceability semiconductor device impaired.
Notes: These ratings based maximum junction temperature These steady state limits. factory should consulted applications involving pulsed duty cycle operations.
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 25/07/2003
2N3416 2N3417
Characteristics Tamb=25 Symbol Current Gain VCE=4.5V, IC=2mA Small Signal Current Gain VCE=4.5V, IC=2mA, =1kHz Collector Cutoff Current VCB=25V VCB=18V, Ta=100 Emitter Cutoff Current VEB=5V Collector Saturation Voltage IC=50mA, IB=3mA Base Saturation Voltage IC=50mA, IB=3mA Collector Emitter Breakdown Voltage* IC=10Ma Collector Base Breakdown Voltage IC=10µA Emitter Base Breakdown Voltage IE=10µA Thermal Resistance Junction Ambient Thermal Resistance Junction Case
*Pulse Test Pulse width300µs, Duty Cycle2%.
Min.
Typ.
Max. 83.3
Unit
2N3416 2N3417 2N3416 2N3417
ICBO ICBO IEBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO RthA RthC
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 25/07/2003

Silicon Epitaxial Planar Transistor General Purpose Amplifier gen

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