Silicon Epitaxial Planar Transistor high voltage applications. transis
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2SA1024
Silicon Epitaxial Planar Transistor high voltage applications. transistor subdivided into groups, according current gain. special request, these transistors manufactured different configurations.
Absolute Maximum Ratings Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO Ptot Value 1000 +150 Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
2SA1024
Characteristics Tamb=25 Symbol Current Gain -VCE=5V, -IC=10mA Current Gain Group Collector Cutoff Current -VCB=150V Emitter Cutoff Current -VEB=5V Gain Bandwidth Product -VCE=30V, -IC=10mA Output Capacitance -VCB=10V, f=1MHz Base Emitter Voltage -VCE=5V, -IC=30mA Collector Saturation Voltage -IC=10mA, -IB=1mA -VCE(sat) -VBE -IEBO -ICBO Min. Typ. Max. Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
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