Silicon Epitaxial Transistor POWER AMPLIFIER APPLICATIONS POWER S
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2SA1020
Silicon Epitaxial Transistor
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES
Collector Saturation Voltage VCE(sat)=-0.5V (Max.) (IC=-1A) High Speed Switching Time Tstg=1.0us (Typ.)
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO Ptot Value +150 Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 24/03/2004
2SA1020
Characteristics Tamb=25 Symbol Current Gain -VCE=2V, -IC=0.5A -VCE=2V, -IC=1.5A Collector Cutoff Current -VCB=50V Emitter Cutoff Current -VEB=5V Collector Emitter Breakdown Voltage -IC=10mA Transition Frequency -VCE=2V, -IC=0.5A Collector Output Capacitance -VCB=10V, f=1MHz Base Emitter Saturation Voltage -IC=1A, -IC=0.05A Collector Emitter Saturation Voltage -IC=1A, -IB=0.05A Switching Time DUTY CYCLE1% Turn-on Time Fall Time -IB1=IB2=0.05A,-VCC=30V Storage Time -VCE(sat) tstg -VBE(sat) -V(BR)CEO -IEBO -ICBO Min. Typ. Max. Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 24/03/2004
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