Silicon Epitaxial Planar Transistor High -Voltage Low-Noise applicatio
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2SA1016
Silicon Epitaxial Planar Transistor High -Voltage Low-Noise applications transistor subdivided into three groups according current gain.
Absolute Maximum Ratings Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -ICP Ptot Value +125 Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 17/5/2004
2SA1016
Characteristics Tamb=25 Symbol Current Gain -VCE=6V, -IC=1mA Current Gain Group Collector Base Breakdown Voltage -IC=10µA Collector Emitter Breakdown Voltage -IC=1mA Emitter Base Breakdown Voltage -IE=10µA Collector Cutoff Current -VCB=80V Emitter Cutoff Current -VEB=4V Collector Emitter Saturation Voltage -IC=10mA, -IB=1mA Gain Bandwidth Product -VCE=6V, -IC=1mA Output Capacitance -VCB=10V, f=1MHz Noise Level VCC=30V, IC=1mA Rg=56K,VG=77dB/1kHz Noise Peak Level VCC=30V, IC=1mA Rg=56K,VG=77dB/1kHz CNO(peak) CNO(ave) -VCE(sat) -IEBO -ICBO -V(BR)EBO -V(BR)CEO -V(BR)CBO Min. Typ. Max. Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 17/5/2004
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