Silicon Epitaxial Planar Transistor switching amplifier applications.

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Silicon Epitaxial Planar Transistor switching amplifier applications.

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BC556 BC559
Silicon Epitaxial Planar Transistor switching amplifier applications. These transistors subdivided into three groups according their current gain. type BC556 available groups however, types BC557 BC558 supplied three groups. BC559 low-noise type available three groups. complementary types, transistors BC546.BC549 recommended. special request, these transistors manufactured different configurations.
Absolute Maximum Ratings Symbol Collector Base Voltage BC556 BC557 BC558, BC559 Collector Emitter Voltage BC556 BC557 BC558, BC559 Collector Emitter Voltage BC556 BC557 BC558, BC559 Emitter Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
Value
Unit
-VCBO -VCBO -VCBO -VCES -VCES -VCES -VCEO -VCEO -VCEO -VEBO -ICM -IBM Ptot
+150
Valid provided that leads kept ambient temperature distance from case
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
BC556 BC559
Characteristics Tamb=25 Symbol h-Parameters -VCE=5V, -IC=2mA, f=1kHz Current Gain Current Gain Group Input lmpedance Current Gain Group Output Admittance Current Gain Group Reverse Voltage Transfer Ratio Current Gain Group Current Gain Current Gain Group -VCE=5V, -IC=10µA Current Gain Group -VCE=5V, -IC=2mA Current Gain Group -VCE=5V, -IC=100mA Collector Saturation Voltage -IC=10mA, -IB=0.5mA -IC=100mA, -IB=5mA Base Saturation Voltage -IC=10mA, -IB=0.5mA -IC=100mA, -IB=5mA Base Emitter Voltage -VCE=5V, -IC=2mA -VCE=5V, -IC=10mA Collector Emitter Cutoff Current -VCE=80V -VCE=50V -VCE=30V -VCE=80V, Tj=125 -VCE=50V, Tj=125 -VCE=30V, Tj=125
Min.
Typ.
Max.
Unit
-VCEsat -VCEsat -VBEsat -VBEsat -VBE -VBE
BC556 BC557 BC558, BC559 BC556 BC557 BC558, BC559
-ICES -ICES -ICES -ICES -ICES -ICES RthA
Thermal Resistance Junction Ambient
Valid provided that leads kept ambient temperature distance from case
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
BC556 BC559
Characteristics Tamb=25 Symbol Gain-Bandwidth Product -VCE=5V, -IC=10mA, f=100MHz Collector-Base Capacitance -VCB=10V, f=1MHz Noise Figure -VCE=5V, -IC=200µA, RG=2k, f=1kHz, f=200Hz BC556, BC557, BC558 BC559 CCBO Min. Typ. Max. Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002

Silicon Epitaxial Planar Transistor switching amplifier applications.

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