Silicon Epitaxial Power Transistor Low-Frequencey Power Amplifier

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Silicon Epitaxial Power Transistor Low-Frequencey Power Amplifier

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2SD1691T
Silicon Epitaxial Power Transistor
Low-Frequencey Power Amplifiers Mid-Speed Switching transistor subdivided into three groups, according DC-DC current gain.
Absolute Maximum Ratings Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Current (pulse)
TO-126 Plastic Package Symbol VCBO VCEO VEBO IC(DC) IB(DC) IC(pulse) Ptot Ptot Value +150 Unit
Total power dissipation Total power dissipation Junction Temperature Storage Temperature Range PW10ms, duty cycle50%. Characteristics
Parameter Current Gain Current Gain Group Collector Cutoff Current Emitter Cutoff Current Base Saturation Voltage Collector Saturation Voltage Turn-on time Storage time Fall time -IB2 A,RL
Symbol
Min.
Max.
Unit
ICBO IEBO VBE(sat) VCE(sat) Tstg
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 22/03/2006

Silicon Epitaxial Power Transistor Low-Frequencey Power Amplifier

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