Silicon Epitaxial Planar Transistor transistor subdivided into three g
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2SA1013L
Silicon Epitaxial Planar Transistor transistor subdivided into three groups, according current gain.
Absolute Maximum Ratings Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics
TO-92L Plastic Package Weight approx. 0.38g Symbol -VCBO -VCEO -VEBO Ptot Symbol Value +150 Min. 0.45 Typ. Max. 0.75 Unit
Unit
Parameter Current Gain -VCE Current Gain Group
-ICBO -IEBO -V(BR)CEO -VCE(sat) -VBE(on)
Collector Cutoff Current -VCB Emitter Cutoff Current -VEB Collector Emitter Breakdown Voltage Collector Emitter Saturation Voltage Base Emitter Voltage -VCE Current Gain Bandwidth Product -VCE Output Capacitance -VCB
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 22/03/2006
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