`ST' Active Device Mount 13PD75LDC-ST 13PD75LDC-ST, InGaAs p
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High Preformance InGaAs p-i-n Photodiode
`ST' Active Device Mount
13PD75LDC-ST
13PD75LDC-ST, InGaAs photodiode with 75µm diameter photosensitive region packaged TO-46 header aligned AT&T active device mount, low-darkcurrent version 13PD75-ST intended high speed noise applications. diameter photosensitive region sufficently small enable operation dark current capacitance while offering efficient coupling multi-mode fiber. Reliability assured 100% purge burn-in 200oC, hours, planar semiconductor design dielectric passivation. receptacle suitable bulkhead board mounting.
Features
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics:
Parameters Test Conditions
1300nm (-3dB)
0.70 0.65
Units
Volts
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response
0.90
Absolute Maximum Ratings
Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Flynn Road, Camarillo, 93012 Volts 85oC -40oC 85oC 250oC tel(805)445-4500 fax(805)445-4502
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