13PD75LDC-S, InGaAs photodiode with 75µm-diameter photosensitive regio
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High Speed InGaAs p-i-n Photodiode 13PD75LDC-S
13PD75LDC-S, InGaAs photodiode with 75µm-diameter photosensitive region mounted metallized ceramic substrate, low-dark-current version 13PD75 intended high speed noise applications. diameter photosensitive region sufficiently small enable operation dark current capacitance while offering efficient coupling multi-mode fiber. Reliability assured 100% purge burn-in (200oC, hours, 20V), planar semiconductor design dielectric passivation. Chips also attached wire bonded customer-supplied other specified submounts.
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics
Parameters Test Conditions
1300nm (-3dB)
0.80
0.90
0.11
Units
Volts
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Absolute Maximum Ratings
Volts 85oC -40oC 85oC 250oC tel(805)445-4500 fax(805)445-4502
Flynn Road, Camarillo, 93012
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