13PD75-ST 13PD75-ST, InGaAs photodiode with 75µm-diameter photose
|
|
|
Top Searches for this datasheet
`ST' Active Device Mount
13PD75-ST
13PD75-ST, InGaAs photodiode with 75µm-diameter photosensitive region packaged TO-46 header aligned AT&T active device mount, intended high speed noise applications. Planar semiconductor design dielectric passivation provide superior noise performance. Reliability assured hermetic sealing 100% purge burn-in 200oC, hours, receptacle suitable bulkhead board mounting.
Features
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics:
Parameters Test Conditions
1300nm (-3dB)
0.70 0.65
Units
Volts
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Absolute Maximum Ratings
Volts 85oC -40oC 85oC 250oC
Flynn Road, Camarillo, 93012
tel(805)445-4500
fax(805)445-4502
Other recent searches
XAPP172 - XAPP172 XAPP172 Datasheet
PBC03DBCN - PBC03DBCN PBC03DBCN Datasheet
MODELHFR4010C - MODELHFR4010C MODELHFR4010C Datasheet
IDT7203 - IDT7203 IDT7203 Datasheet
IDT7204 - IDT7204 IDT7204 Datasheet
IDT7205 - IDT7205 IDT7205 Datasheet
IDT7206 - IDT7206 IDT7206 Datasheet
CDG22 - CDG22 CDG22 Datasheet
CDG26 - CDG26 CDG26 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
