13PD55-S, InGaAs photodiode with 55µm-diameter photosensitive region m

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13PD55-S, InGaAs photodiode with 55µm-diameter photosensitive region m

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High Speed InGaAs p-i-n Photodiode 13PD55-S
13PD55-S, InGaAs photodiode with 55µm-diameter photosensitive region mounted metallized ceramic substrate, intended high speed noise applications telecommunication data communication systems. Planar semiconductor design dielectric passivation provide very noise preformance. Reliability assured 100% purge burn-in (200oC, hours, 20V). Chips also attached wire bonded customer-supplied other specified submounts.
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics
Parameters Test Conditions
1300nm (-3dB)
0.80
0.05 0.90
Units
Volts
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Absolute Maximum Ratings
Volts 85oC -40oC 85oC 250oC
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13PD55-S, InGaAs photodiode with 55µm-diameter photosensitive region m

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