35PD500-S, InGaAs photodiode with 500mm-diameter photosensitive region
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InGaAs p-i-n Photodiode 35PD500-S
35PD500-S, InGaAs photodiode with 500mm-diameter photosensitive region mounted metallized ceramic substrate, versatile device applicable high sensitivity instrumentation, laser back-facet monitoring, low-bit-rate telecomm datacomm transmission. Planar semiconductor design dielectric passivation provide superior noise performance. Reliability assured 100% purge burn-in (200oC, hours, 15V). Chips also attached wire bonded customer-supplied other specified packages.
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics
Parameters
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Test Conditions
1300nm 1500nm
0.80
Units
Volts
Absolute Maximum Ratings
Volts 85oC -40oC 85oC 250oC
Flynn Road, Camarillo, 93012
(805) 445-4500
(805) 445-4502.
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