35PD300LDC-S, InGaAs photodiode with 300µm-diameter photosensitive reg

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35PD300LDC-S, InGaAs photodiode with 300µm-diameter photosensitive reg

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Purpose InGaAs p-i-n Photodiode 35PD300LDC-S
35PD300LDC-S, InGaAs photodiode with 300µm-diameter photosensitive region mounted metallized ceramic substrate, low-dark-current version 35PD300S, Telcom Devices' most versatile detectors. Applications include high sensitivity instrumentation, laser back-facet monitoring, moderate-bit-rate telecomm datacomm transmission. Planar semiconductor design dielectric passivation provide superior noise performance. Reliability assured 100% purge burn-in (200oC, hours, 15V). Chips also attached wire bonded customer-supplied other specified submounts.
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics
Parameters
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Test Conditions
1300nm 1500nm
0.70
0.51
Units
Volts
Absolute Maximum Ratings
Volts -40oC 85oC -40oC 85oC 250oC
Flynn Road, Camarillo, 93012
(805) 445-4500
(805) 445-4502.

35PD300LDC-S, InGaAs photodiode with 300µm-diameter photosensitive reg

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