Silicon Epitaxial Power Transistor Low-Frequencey Power Amplifiers Mid

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Silicon Epitaxial Power Transistor Low-Frequencey Power Amplifiers Mid

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2SD1691
Silicon Epitaxial Power Transistor Low-Frequencey Power Amplifiers Mid-Speed Switching transistor subdivided into three groups, according DC-DC current gain. FEATURES: current capacity VCE(sat) IC(DC)=5.0A, IC(pulse)=8.0A VCE(sat)=0.1V TYP. IC=2.0A, IB=0.2A) power dissipation TO-126 type power transistor PT=1.3W Ta=25), TC=25)
TO-126 Plastic Package
Absolute Maximum Ratings Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (D.C) Base Current (D.C) Collector Current (pulse) (Note Total power dissipation(Ta=25 Total power dissipation(Tc=25 Junction Temperature Storage Temperature Range Note PW10ms, duty cycle50%
Value +150
Unit
VCBO VCEO VEBO IC(DC) IB(DC) IC(pulse) Ptot Ptot
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 25/10/2002
2SD1691
Characteristics Tamb=25 Symbol Current Gain (Note VCE=1.0V, IC=2.0A Current Gain Group VCE=1.0V, IC=0.1A VCE=1.0V, IC=5.0A Collector Cutoff Current VCB=50V Emitter Cutoff Current VEB=7.0V Base Saturation Voltage (Note IC=2.0A, IB=0.2A Collector Saturation Voltage (Note IC=2.0A, IB=0.2A Turn-on time Storage time Fall time Note Pulse test PW350µs, duty cycle2% RL=5.0,VCC IC=2.0A,IB1=-IB2=0.2A Min. Typ. Max. Unit
ICBO IEBO VBE(sat) VCE(sat) Tstg
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 25/10/2002

Silicon Epitaxial Power Transistor Low-Frequencey Power Amplifiers Mid

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