Silicon Epitaxial Planar Transistor transistor subdivided into three g
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2SA1013
Silicon Epitaxial Planar Transistor transistor subdivided into three groups, according current gain. special request, these transistors manufactured different configurations.
TO-92L Plastic Package Weight approx. 0.38g
Absolute Maximum Ratings Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO Ptot Value +150 Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
2SA1013
Characteristics Ta=25 Symbol Current Gain -VCE=5V, -IC=200mA Current Gain Group Collector Cutoff Current -VCB=150V Emitter Cutoff Current -VEB=6V Collector Emitter Breakdown Voltage -IC=10mA Collector Emitter Saturation Voltage -IC=500mA, -IB=50mA Base Emitter Voltage -IC=5mA, -VCE=5V Current Gain Bandwidth Product -VCE=5V, -IC=200mA Output Capacitance -VCB=10V, f=1MHz -VBE(on) 0.45 0.75 -VCE(sat) -BVCEO -IEBO -ICBO Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
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