Silicon Epitaxial Planar Transistor switching amplifier applications.

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Silicon Epitaxial Planar Transistor switching amplifier applications.

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8550
Silicon Epitaxial Planar Transistor switching amplifier applications. Especially suitable AF-driver stages power output stages. transistor subdivided into four groups, according current gain. complementary type transistor 8050 recommended. special request, these transistors manufactured different configurations.
Absolute Maximum Ratings Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Value
Unit
-VCEO -VCBO -VEBO -ICM Ptot
+150
Valid provided that leads kept ambient temperature distance from case
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
8550
Characteristics Tamb=25 Symbol Current Gain -VCE=1V, -IC=100mA 8550B 8550C 8550D 8550E -VCE=1V, -IC=350mA Collector Cutoff Current -VCB=35V Collector Saturation Voltage -IC=500mA, -IB=50mA Base Saturation Voltage -IC=500mA, -IB=50mA Collector Emitter Breakdown Voltage -IC=2mA Collector Base Breakdown Voltage -IC=10µA Emitter Base Breakdown Voltage -IE=100µA Gain Bandwidth Product -VCE=5V, -IC=10mA, f=50MHz Collector Base Capacitance -VCB=10V, f=1MHz Thermal Resistance Junction Ambient
Min.
Typ.
Max.
Unit
ICBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO CCBO RthA
Valid provided that leads kept ambient temperature distance from case
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
8550
Admissible power dissipation versus ambient temperature
Valid provided that leads kept ambient temperature distance from case
Collector current versus base emitter voltage
8550
8550
typical limits Tamb=25o
Ptot
Tamb
-VBE
Pulse thermal resistance versus pulse duration
Valid provided that leads kept ambient temperature distance from case
Collector cutoff current versus ambient temperature
8550
8550
rthA
0.05 0.02
-ICES
0.01
0.005
Tamb
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
8550
current gain versus collector current
Common emitter collector characteristics
8550 1000
8550
0.85
0.75
itter collector characteristics
-VBE=0.7V
-VCE
Common emitter collector characteristics
8550
8550
0.35
0.25
0.15 =0.05mA
0.2mA
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
8550
ollecto satu ratio voltage versus collecto curren
Gain bandwidth product versus collector current
typical b=25o
8550
8550
Tamb=25 f=20MHz
Base saturation voltage versus collector current
8550
typical b=25o
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002

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