Silicon Epitaxial Planar Transistor transistor subdivided into three g
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2SA1013 (TO-92)
Silicon Epitaxial Planar Transistor transistor subdivided into three groups, according current gain. special request, these transistors manufactured different configurations.
Absolute Maximum Ratings Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO Ptot Value +150 Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 04/08/2004
2SA1013 (TO-92)
Characteristics Ta=25 Symbol Current Gain -VCE=5V, -IC=200mA Current Gain Group Collector Cutoff Current -VCB=150V Emitter Cutoff Current -VEB=6V Collector Emitter Breakdown Voltage -IC=10mA Collector Emitter Saturation Voltage -IC=500mA, -IB=50mA Base Emitter Voltage -IC=5mA, -VCE=5V Current Gain Bandwidth Product -VCE=5V, -IC=200mA Output Capacitance -VCB=10V, f=1MHz -VBE(on) 0.45 0.75 -VCE(sat) -BVCEO -IEBO -ICBO Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 04/08/2004
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