Silicon Epitaxial Planar Transistor General Purpose Amplifier gen
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2N3416 2N3417
Silicon Epitaxial Planar Transistor General Purpose Amplifier
general purpose amplifiers switches requiring collector current
Absolute Maximum Ratings* Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Total Device Dissipation Derate above Junction Temperature Storage Temperature Range
Value +150
Unit
VCEO VCBO VEBO Ptot
*These ratings limiting values above which serviceability semiconductor device impaired.
Notes: These ratings based maximum junction temperature These steady state limits. factory should consulted applications involving pulsed duty cycle operations.
SEMTECH ELECTRONICS LTD.
(Subsidiary Sino-Tech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 25/07/2003
2N3416 2N3417
Characteristics Tamb=25 Symbol Current Gain VCE=4.5V, IC=2mA Small Signal Current Gain VCE=4.5V, IC=2mA, =1kHz Collector Cutoff Current VCB=25V VCB=18V, Ta=100 Emitter Cutoff Current VEB=5V Collector Saturation Voltage IC=50mA, IB=3mA Base Saturation Voltage IC=50mA, IB=3mA Collector Emitter Breakdown Voltage* IC=10Ma Collector Base Breakdown Voltage IC=10A Emitter Base Breakdown Voltage IE=10A Thermal Resistance Junction Ambient Thermal Resistance Junction Case
*Pulse Test Pulse width300s, Duty Cycle2%.
Min.
Typ.
Max. 83.3
Unit
2N3416 2N3417 2N3416 2N3417
ICBO ICBO IEBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO RthA RthC
SEMTECH ELECTRONICS LTD.
(Subsidiary Sino-Tech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 25/07/2003
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