Silicon Epitaxial Planar Transistor switching amplifier applications.
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Silicon Epitaxial Planar Transistor switching amplifier applications. Especially suitable AF-driver stages power output stages. transistor subdivided into group, according current gain. special request, these transistors manufactured different configurations.
Weight approx. 0.19g TO-92 Plastic Package
Absolute Maximum Ratings 25OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO Ptot Value 1.25 +150 Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary Sino-Tech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 11/06/2004
Characteristics Tamb=25 Symbol Current Gain VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA Collector Base Breakdown Voltage IC=100A Collector Emitter Breakdown Voltage IC=2mA Emitter Base Breakdown Voltage IE=100A Collector Cutoff Current VCB=35V Emitter Cutoff Current VBE=6V Collector Saturation Voltage IC=600mA, IB=20mA Base Saturation Voltage IC=600mA, IB=20mA Base Emitter Voltage IC=10mA, VCE=1V Gain Bandwidth Product VCE=10V, IC=50mA Collector Base Capacitance VCB=10V, f=1MHz 0.66 VBE(sat) 0.98 VCE(sat) 0.55 IEBO ICBO V(BR)EBO V(BR)CEO V(BR)CBO 1000 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary Sino-Tech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 11/06/2004
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