Epitaxial Silicon Transistor General purpose transistor Collector Emit
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2N4400 2N4401
Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO Collector Dissipation: (max) special request, these transistors manufactured different configurations.
Absolute Maximum Ratings Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO Ptot Value +150 Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 02/12/2005
2N4400 2N4401
Characteristics Tamb Parameter Current Gain VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA Collector Cutoff Current VCB=35V Emitter Cutoff Current VEB=5V Collector Emitter Breakdown Voltage IC=1mA Collector Base Breakdown Voltage IC=100µA Emitter Base Breakdown Voltage IE=100µA Collector Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA Collector Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA Gain Bandwidth Product VCE=10V, IC=20mA, f=100MHz Collector Base Capacitance VCB=5V, f=100MHz Turn Time VCC=30V, VBE=2V, IC=150mA, IB1=15mA Turn Time VCC=30V, IC=150mA, IB1=IB2=15mA 2N4400 2N4401 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 Symbol ICBO IEBO V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VCEsat VBEsat VBEsat CCBO toff Min. Max. Unit
0.75
0.75 0.95
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 02/12/2005
2N4400 2N4401
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 02/12/2005
2N4400 2N4401
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 02/12/2005
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