Silicon Epitaxial Planar Transistor transistor subdivided into three g
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2SA1013L
Silicon Epitaxial Planar Transistor transistor subdivided into three groups, according current gain.
TO-92L Plastic Package Weight approx. 0.38g Absolute Maximum Ratings Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics
Symbol -VCBO -VCEO -VEBO Ptot Symbol Current Gain Group -ICBO -IEBO -V(BR)CEO -VCE(sat) -VBE(on)
Value +150 Min. 0.45 Typ. Max. 0.75
Unit
Unit
Parameter Current Gain -VCE
Collector Cutoff Current -VCB Emitter Cutoff Current -VEB Collector Emitter Breakdown Voltage Collector Emitter Saturation Voltage Base Emitter Voltage -VCE Current Gain Bandwidth Product -VCE Output Capacitance -VCB
SEMTECH ELECTRONICS LTD.
(Subsidiary Sino-Tech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 22/03/2006
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