MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET HI-REL

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MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET HI-REL

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HUF75637SMD05R HUF75637SMD05R
MECHANICAL DATA Dimensions (inches)
N-CHANNEL POWER MOSFET HI-REL APPLICATIONS
VDSS ID(cont) RDS(on)
100V 0.03
FEATURES
HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT
SMD05 (TO-276AA)
HUF75637SMD05
PAD1 GATE DRAIN PAD3 SOURCE
SCREENING OPTIONS AVAILABLE LEADS ISOLATED FROM CASE
HUF75637SMD05R
PAD1 SOURCE DRAIN PAD3 GATE
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
Gate Source Voltage Continuous Drain Current @Tcase 25°C Continuous Drain Current Tcase 100°C Pulsed Drain Current Power Dissipation Tcase 25°C Linear Derating Factor Tstg Operating Storage Temperature Range Themal Resistance Junction Case
±20V 160A 150W 1.2W/°C +175°C 0.83°C/W
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3300 Issue
HUF75637SMD05R HUF75637SMD05R
ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated)
Parameter
STATE CHARACTERISTICS BVDSS Drain Source Breakdown Voltage IDSS IGSS Drain Sorce Breakdown Current Gate Source Leakage Current STATE CHARACTERISTICS
Test Conditions
±20V 250µA 250µA 150°C
Min.
Typ.
Max.
Unit
±100
0.0255 1700 0.030
VGS(th) Gate Threshold Voltage RDS(on) Drain Source Resistance CAPACITANCE CHARACTERISTICS Ciss Coss Crss Qg(TOT) Qg(10) Qg(TH) td(ON) td(off) tOFF Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge GATE CHARGE CHARACTERISTICS Total Gate Charge Gate Charge Threshold Gate Charge Gate Source Gate Charge Gate Drain "Miller" Charge SWITCHING CHARACTERISTICS Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time 1MHz
Ig(REF) =1.0mA
1.25 1.00
SOURCE DRAIN DIODE SPECIFICATIONS Source Drain Diode Voltage Reverse Recovery Time disd 100A/µs Reverse Recovery Charge
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3300 Issue

MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET HI-REL

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