MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET HI-REL

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MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET HI-REL

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HUF75623SMDR HUF75623SMDR
MECHANICAL DATA Dimensions (inches)
N-CHANNEL POWER MOSFET HI-REL APPLICATIONS
VDSS ID(cont) RDS(on)
100V 0.064
FEATURES
HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT
SMD1
HUF75623SMD
PAD1 GATE DRAIN PAD3 SOURCE
SCREENING OPTIONS AVAILABLE LEADS ISOLATED FROM CASE
HUF75623SMDR
PAD1 SOURCE DRAIN PAD3 GATE
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
Gate Source Voltage Continuous Drain Current @Tcase 25°C Continuous Drain Current Tcase 100°C Pulsed Drain Current Power Dissipation Tcase 25°C Linear Derating Factor Tstg Operating Storage Temperature Range Themal Resistance Junction Case
±20V 0.6W/°C +175°C 1.76°C/W
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 10/00
HUF75623SMDR HUF75623SMDR
ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated)
Parameter
STATE CHARACTERISTICS BVDSS Drain Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate Source Leakage Current STATE CHARACTERISTICS
Test Conditions
20±V 250µA 250µA 150°C
Min.
Typ.
Max.
Unit
±100
0.054 0.064
VGS(th) Gate Threshold Voltag RDS(on) Drain Source Resistance CAPACITANCE CHARACTERISTICS Ciss Coss Crss Qg(TOT) Qg(10) Qg(TH) td(ON) td(off) tOFF Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge GATE CHARGE CHARACTERISTICS Total Gate Charge Gate Charge Threshold Gate Charge Gate Source Gate Charge Gate Drain "Miller" Charge SWITCHING CHARACTERISTICS Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time 1MHz
Ig(REF) =1.0mA
1.76 °C/W
SOURCE DRAIN DIODE SPECIFICATIONS Source Drain Diode Voltag Reverse Recovery Time 22Adisd 100A/µs Reverse Recovery Charge THERMAL CHARACTERISTICS Thermal Resistance Junction Case TO220 Thermal Resistance Junction Ambient
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 10/00

MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET HI-REL

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