MECHANICAL DATA Dimensions (inches) P-CHANNEL POWER MOSFET 2

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MECHANICAL DATA Dimensions (inches) P-CHANNEL POWER MOSFET 2

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2N6845LCC4 IRFE9120
MECHANICAL DATA Dimensions (inches)
P-CHANNEL POWER MOSFET
2.16 (0.085)
1.27 (0.050) 1.07 (0.040)
9.14 (0.360) 8.64 (0.340)
1.39 (0.055) 1.02 (0.040)
7.62 (0.300) 7.12 (0.280)
0.76 (0.030) 0.51 (0.020)
VDSS ID(cont) RDS(on)
FEATURES
-100V -3.5A
1.65 (0.065) 1.40 (0.055)
0.33 (0.013) Rad. 0.08 (0.003)
SURFACE MOUNT SMALL FOOTPRINT HERMETICALLY SEALED DYNAMIC dv/dt RATING
1.39 (0.055) 1.15 (0.045)
0.43 (0.017) 0.18 (0.007 Rad.
LCC4 GATE DRAIN SOURCE Pins Pins1,2,15,16,17,18 Pins 6,7,8,9,10,11,12,13
AVALANCHE ENERGY RATING SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
dv/dt Tstg Gate Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Power Dissipation Tcase 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery Operating Storage Temperature Range Surface Temperature sec).
Notes Pulse Test: Pulse Width 300µs, -25V Peak -3.5A Starting 25°C -3.5A di/dt -110A/µs BVDSS 150°C Suggested
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
±20V (VGS -10V Tcase 25°C) (VGS -10V Tcase 100°C) -3.5A -2.2A -14A 0.09W/°C
115mJ -5.0V/ns +150°C 300°C
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5518 Issue
2N6845LCC4 IRFE9120
ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage BVDSS Temperature Coefficient Breakdown Voltage Static Drain Source On-State RDS(on) Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS IGSS IGSS Ciss Coss Crss td(on) td(off) Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Test Conditions
-1mA Reference 25°C -1mA -10V -2.2A -10V -3.5A -250µA -15V -2.2A -80V 125°C -20V -25V 1MHz -10V -3.5A -50V -50V -3.5A
Min.
-100
Typ.
Max.
Unit
-0.10 0.69 -250 -100 16.3 -3.5 -4.8 Negligible
1.25
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current -3.5A 25°C Diode Forward Voltage Reverse Recovery Time -3.5A 25°C Reverse Recovery Charge -100A/µs -50V Forward Turn-On Time THERMAL CHARACTERISTICS
Thermal Resistance Junction Case RJPC Thermal Resistance Junction Board
Notes Pulse Test: Pulse Width 300ms, Repetitive Rating Pulse width limited maximum junction temperature.
°C/W
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5518 Issue

MECHANICAL DATA Dimensions (inches) P-CHANNEL POWER MOSFET 2

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