MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET ENHANC

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MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET ENHANC

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2N6788LCC4 IRFE120
MECHANICAL DATA Dimensions (inches)
N-CHANNEL POWER MOSFET ENHANCEMENT MODE
2.16 (0.085)
1.27 (0.050) 1.07 (0.040)
9.14 (0.360) 8.64 (0.340)
1.39 (0.055) 1.02 (0.040)
FEATURES
AVALANCHE ENERGY RATING SIMPLE DRIVE REQUIREMENTS HERMETICALLY SEALED CERAMIC SURFACE MOUNT
7.62 (0.300) 7.12 (0.280)
0.76 (0.030) 0.51 (0.020)
1.65 (0.065) 1.40 (0.055)
0.33 (0.013) Rad. 0.08 (0.003)
1.39 (0.055) 1.15 (0.045)
0.43 (0.017) 0.18 (0.007 Rad.
APPLICATIONS
LCC4 Ceramic Package DSCC Package (U5)
Underside View
FAST SWITCHING MOTOR CONTROLS POWER SUPPLIES
GATE DRAIN SOURCE
Pins Pins1,2,15,16,17,18 Pins 6,7,8,9,10,11,12,13
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
@Tcase 25°C @Tcase 100°C Tcase 25°C RJ-C TJ,Tstg Lead Temperature Drain Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Gate Source Voltage Maximum Power Dissipation Thermal Resistance Junction Case Operating Storage Temperature Range from case secs)
100V 4.5A 3.0A ±20V 9.1°C/W +150°C 300°C
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5652 Issue
2N6788LCC4 IRFE120
ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage VGS(th)* Gate Threshold Voltage IGSSF IGSSR IDSS Gate Body Leakage Forward Gate Body Leakage Reverse Zero Gate Voltage Drain Current -20V 80V. 1MHz 4.5A 125°C 3.0A 4.5A 3.0A
Test Conditions
1.0mA 250A
Min.
Typ.
Max.
Unit
-100 0.30 0.345
RDS(on)* Static Drain Source On-State Resistance gfs* Ciss Coss Crss td(on) td(off) Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge
(MOSFET switching times essentially independent operating temperature.)
4.5A
BODY- DRAIN DIODE RATINGS CHARACTERISTICS Modified POWER Continuous Source Current (Body Diode) Source Current (Body Diode) Diode Forward Voltage* Reverse Recovery Time Reverse Recovery Charge
symbol showing intergal
junction rectifier.
4.5A 25°C 4.5A
25°C
100A/s
Notes Pulse Test: Pulse Width 300s,
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5652 Issue

MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET ENHANC

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