2SC6089 2SC6089 Features Triple Diffused Planar Silicon

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2SC6089 2SC6089 Features Triple Diffused Planar Silicon

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Ordering number ENA0995
2SC6089
2SC6089
Features
Triple Diffused Planar Silicon Transistor
Color Horizontal Deflection Output Applications
High speed. High breakdown voltage (VCBO=1500V). Adoption high reliability process. Adoption MBIT process.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Tc=25°C Conditions Ratings 1500 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0A VCE=1500V, RBE=0 IC=100mA, IB=0A VEB=4V, IC=0A Ratings Unit
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0507KC TC-00000003 A0995-1/4
2SC6089
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Current Gain Fall Time Symbol VCE(sat) VBE(sat) hFE1 hFE2 Conditions IC=7.2A, IB=1.44A IC=7.2A, IB=1.44A VCE=5V, IC=1A VCE=5V, IC=8A IC=5A, IB1=1A, IB2=-2A Ratings Unit
Package Dimensions
unit (typ) 7504-001
Switching Time Test Circuit
PW=20µs D.C.1% INPUT
OUTPUT
16.0
470µF VCC=200V
22.0
21.0
100µF VBE=
20.4
5.45
Base Collector Emitter SANYO TO-3PMLH
5.45
1.8A 1.6A 1.4A 1.2A 2.0A
VCE=5V
Collecotr Current,
1.0A 0.8A 0.6A 0.4A
Collector Current,
0.2A
IB=0A
IT03005
Collector-to-Emitter Voltage,
IT03004
Base-to-Emitter Voltage,
VCE(sat)
Ta=120°C
25°C
VCE=5V
Collector-to-Emitter Saturation Voltage, VCE(sat)
IB=5
Current Gain,
-40°C
Ta=1
-40°
0.01
Collector Current,
IT03006
Collector Current,
IT03007
A0995-2/4
2SC6089
Time
tstg
Time
VCC=200V IC=5A IB1=1A load
Switching Time, Time
Switching Time, Time
VCC=200V IB1=5 IB1=2 load
Forward Bias
Collector Current,
IT13088
Reverse Bias
Base Current,
IT13089
ICP=25A IC=10A
Collector Current,
Collector Current,
L=500µH IB2= Tc=25°C Single pulse
0.01
Tc=25°C Single pulse
1000 IT13090
1000
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
IT13091
Collector Dissipation,
Collector Dissipation,
Ambient Temperature,
IT13092
Case Temperature,
IT13093
A0995-3/4
2SC6089
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information December, 2007. Specifications information herein subject change without notice.
A0995-4/4

2SC6089 2SC6089 Features Triple Diffused Planar Silicon

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