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2SC6091 2SC6091 Features Triple Diffused Planar Silicon


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Ordering number ENA0994
2SC6091
2SC6091
Features
Triple Diffused Planar Silicon Transistor
Color Horizontal Deflection Output Applications
High speed. High breakdown voltage (VCBO=1500V). Adoption high reliability process. Adoption MBIT process.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Tc=25°C Conditions Ratings 1500 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0A VCE=1500V, RBE=0 IC=100mA, IB=0A VEB=4V, IC=0A Ratings Unit
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0507KC TC-00000485 A0994-1/4
2SC6091
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Current Gain Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) hFE1 hFE2 Conditions IC=2.25A, IB=0.45A IC=4.5A, IB=0.9A IC=4.5A, IB=0.9A VCE=5V, IC=1A VCE=5V, IC=5A IC=3A, IB1=0.6A, IB2=-1.2A Ratings Unit
Package Dimensions
unit (typ) 7504-001
16.0
Switching Time Test Circuit
INPUT PW=20µs D.C.1% 100µF VBE= 470µF VCC=200V OUTPUT
66.7
21.0
22.0
20.4
5.45
Base Collector Emitter SANYO TO-3PMLH
5.45
1.8A
VCE=5V
Collecotr Current,
Collector Current,
1.6A 1.4A 1.2A 1.0A 0.8A
0.6A 0.4A 0.2A 0.05A
IB=0A
IT02644
Collector-to-Emitter Voltage,
IT02643
Base-to-Emitter Voltage,
VCE(sat)
25°C -40°
Ta=120°C
25°C
VCE=5V
Collector-to-Emitter Saturation Voltage, VCE(sat)
IB=5
Current Gain,
-40°C
-40°C
120°C
IT02646
Collector Current,
IT02645
Collector Current,
A0994-2/4
25°C
2SC6091
Time
tstg
Switching Time, Time
Switching Time, Time
VCC=200V IB1=5 IB1=2 load
Time
VCC=200V IC=3A IB1=0.6A load
Forward Bias
Collector Current,
IT02647
Reverse Bias
Base Current,
IT02648
ICP=20A
Collector Current,
Collector Current,
IC=8A
0.01
Tc=25°C Single pulse
L=500µH IB2= Tc=25°C Single pulse
1000
1000 IT02649
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
IT02650
Collector Dissipation,
Collector Dissipation,
Ambient Temperature,
IT02651
Case Temperature,
IT02652
A0994-3/4
2SC6091
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information December, 2007. Specifications information herein subject change without notice.
A0994-4/4

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