Epitaxial Silicon Transistor General purpose transistor Collector Emit
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2N4400 2N4401
Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO Collector Dissipation: (max) 625mW special request, these transistors manufactured different configurations.
Absolute Maximum Ratings (Ta=25 Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO Ptot Value +150 Unit
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
2N4400 2N4401
Characteristics Tamb=25 Symbol Current Gain VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA Collector Cutoff Current VCE=35V, VEB=0.4V Collector Emitter Breakdown Voltage IC=1mA, IB=0 Collector Base Breakdown Voltage IC=100µA, IE=0 Collector Emitter Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA Collector Saturation Voltage IC=150mA, IB=15mA IC=500mA, IB=50mA Emitter Base Breakdown Voltage IE=100µA, IC=0 Gain Bandwidth Product VCE=10V, IC=20mA, f=100MHz Collector Base Capacitance VCB=5V, f=100MHz, IE=0 Turn Time VCC=30V, VBE=2V, IC=150mA, IB1=15mA Turn Time VCC=30V, IC=150mA, IB1=IB2=15mA
Min.
Typ.
Max.
Unit
2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401
ICEX
V(BR)CEO
V(BR)CBO
VCEsat VCEsat
0.75
VBEsat VBEsat
0.75
0.95
V(BR)EBO 2N4400 2N4401
CCBO
toff
Valid provided that leads kept ambient temperature distance from case
FORM AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724)
Dated 07/12/2002
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