4MN10MH Epitaxial Planar Silicon Transistors 4MN10MH Fe

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

4MN10MH Epitaxial Planar Silicon Transistors 4MN10MH Fe

Datasheet Thumbnail

Top Searches for this datasheet

Ordering number ENA0493
4MN10MH
Epitaxial Planar Silicon Transistors
4MN10MH
Features
High-Frequency General-Purpose Amplifier Applications
High fT=400MHz (typ). High breakdown voltage VCEO200V. Small reverse transfer capacitance excellent high-frequnecy characteristic Cre=1.4pF. Complementary pair with 4MP10MH.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions Ratings Mounted ceramic board (600mm2!0.8mm) +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwideth Product Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=150V, IE=0A VEB=2V, IC=0A VCE=10V, IC=10mA VCE=10V, IC=60mA VCE=30V, IC=30mA IC=30mA, IB=3mA IC=10µA, IE=0A IC=1mA, RBE= IE=100µA, IC=0A VCB=30V, f=1MHz VCB=30V, f=1MHz Ratings Unit
Marking
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806AA TC-00000147 A0493-1/3
4MN10MH
Package Dimensions
unit (typ) 7019A-004
0.15
0.25
0.02
0.25
0.65
0.85
0.07
Base Emitter Collector SANYO MCPH3
500µA
VCE=10V
450µA
Collector Current,
350µA
Collector Current,
400µA
300µA 250µA
200µA 150µA
100µA 50µA
IB=0µA
ITR03482
Collector-to-Emitter Voltage, ITR03480
Base-to-Emitter Voltage,
1000
VCE=10V
VCE=30V
Gain-Bandwidth Product,
Current Gain,
ITR03484
Collector Current,
Collector Current,
ITR03486
A0493-2/3
4MN10MH
Reverse Transfer Capacitance,
f=1MHz
f=1MHz
Output Capacitance,
ITR03490
Collector-to-Base Voltage,
ITR03488
Collector-to-Base Voltage,
VCE(sat)
IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat)
Collector Dissipation,
Collector Current,
ITR03492
Ambient Temperature,
ITR11803
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information October, 2006. Specifications information herein subject change without notice.
A0493-3/3

4MN10MH Epitaxial Planar Silicon Transistors 4MN10MH Fe

Top Searches for this datasheet

Other recent searches